Yoshio Nishi's Advances in Non-Volatile Memory and Storage Technology PDF

By Yoshio Nishi

ISBN-10: 0857098039

ISBN-13: 9780857098030

New recommendations are wanted for destiny thinning out of nonvolatile reminiscence. Advances in Non-volatile reminiscence and garage Technology presents an outline of constructing applied sciences and explores their strengths and weaknesses.

After an summary of the present industry, half one introduces advancements in flash applied sciences, together with advancements in 3D NAND flash applied sciences and flash reminiscence for ultra-high density garage units. half appears to be like on the benefits of designing part swap reminiscence and resistive random entry reminiscence applied sciences. It appears to be like particularly on the fabrication, homes, and function of nanowire section swap reminiscence applied sciences. Later chapters additionally ponder modeling of either steel oxide and resistive random entry reminiscence switching mechanisms, in addition to conductive bridge random entry reminiscence applied sciences. ultimately, half 3 seems to be to the way forward for replacement applied sciences. The components lined contain molecular, polymer, and hybrid natural reminiscence units, and a number of random entry reminiscence units resembling nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive units.

Advances in Non-volatile reminiscence and garage Technology is a key source for postgraduate scholars and educational researchers in physics, fabrics technological know-how, and electric engineering. it's a necessary instrument for study and improvement managers eager about electronics, semiconductors, nanotechnology, solid-state thoughts, magnetic fabrics, natural fabrics, and conveyable digital devices.

  • Provides an outline of constructing nonvolatile reminiscence and garage applied sciences and explores their strengths and weaknesses
  • Examines advancements to flash expertise, cost trapping, and resistive random entry memory
  • Discusses rising units resembling these in response to polymer and molecular electronics, and nanoelectromechanical random entry reminiscence (RAM)

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Extra resources for Advances in Non-Volatile Memory and Storage Technology

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Et al. ’ IEEE IEDM Tech. , 597–600. 22. , Lee, C. -T. et al. (2005), ‘A novel NAND-type MONOS memory using 63 nm process technology for multi-gigabit Flash EEPROMs’, IEEE IEDM Tech. , 327–30. 23. -H. et al. (2003), ‘Novel FERAM technologies with MTP cell structure and BLT ferroelectric capacitors’, IEEE IEDM Tech. , 835–9, 2003. 24. Ishiwara, H. (2003), ‘Recent progress in FET-type ferroelectric memories’, IEEE IEDM Tech. , 263–7. 25. , Brown, P. et al. 18 um 4 Mb toggling MRAM’, IEEE IEDM Tech.

6 This 45 nm PCM architecture42 demonstrates the maturity of the technology. 43 These peculiar features combined with data retention, single bit alterability, execution in place and good cycling performance enables traditional NVM utilization but also novel application in the LPDDR field. Moreover, PCM is considered the essential ingredient to push to the market the so-called Storage-Class Memory (SCM),5 a non-volatile solid-state memory technology that is capable of filling the gap between CPU and disks (Fig.

6(a)). The gate conductor acts as the gate of the pipe transistor. Next, WL and select gates are stacked, with insulator layers sandwiched between them. Third, a vertical hole is made, with the subsequent removal of the sacrificial layer. Then, a P-shaped hole is made (Fig. 6(b,c)). Fourth, the ONO is deposited inside this P-shaped hole and undoped poly-Si is deposited there. Finally, a core filler insulator is inserted (Fig. 6(d)). In contrast to several of the 2D-SONOS-Flash memory devices, the Si dioxide layer must be formed by a chemical vapor deposition (CVD) process, not a thermal oxidation process.

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Advances in Non-Volatile Memory and Storage Technology by Yoshio Nishi

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